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CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. Features: *High current capability *Low VCE(SAT) *High current gain *Monolithic construction with built-in base-emitter shunt resistors Equivalent Circuit BTN2129T3 C B R18k R2120 Outline TO-126 BBase CCollector EEmitter E BCE BTN2129T3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=100ms Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 2/5 Symbol VCBO VCEO VEBO IC ICP Pd(TA=25) Pd(TC=25) Tj Tstg Limits 80 50 5 8 12 *1 1 20 150 -55~+150 Unit V V V A W C C Characteristics (Ta=25C) Symbol BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *hFE 1 *hFE 2 *hFE 3 Min. 50 500 2 2 Typ. Max. 10 10 2 1.3 1.5 2.1 2 2.1 20 Unit V A A mA V V V V V K K Test Conditions IC=1mA, IB=0 VCE=40V, IE=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, IB=12mA VCE=3V, IC=3A VCE=4V, IC=4A VCE=3V, IC=500mA VCE=3V, IC=3A VCE=4V, IC=4A *Pulse Test : Pulse Width 380s, Duty Cycle2% BTN2129T3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 10000 Saturation Voltage---(mV) VCE = 3V Current Gain---H FE 1000 10000 VCE(SAT)@IC=250IB Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 3/5 Saturation Voltage vs Collector Current 100 1000 10 1 1 10 100 1000 Collector Current---IC(mA) 10000 100 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Saturation Voltage---(mV) VCE(SAT)@IC=500IB Saturation Voltage vs Collector Current 10000 VCE(SAT)@IC=1000IB 1000 1000 100 10 100 1000 Collector Current---I C(mA) 10000 100 100 1000 Collector Current---I C(mA) 10000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Saturation Voltage---(mV) VBE (SAT)@IC = 250IB 10000 Saturation Voltage vs Collector Current VBE (SAT)@IC = 500IB 1000 1000 100 10 100 1000 Collector Current---I C(mA) 10000 100 10 100 1000 Collector Current---IC(mA) 10000 BTN2129T3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) On voltage vs Collector Current 10000 Power Dissipation---PD(W) VBE (ON) @VCE = 3V On voltage---(mV) 1.2 1 0.8 0.6 0.4 0.2 0 1 10 100 1000 10000 0 50 Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 4/5 Power Derating Curve 1000 100 Collector Current---IC(mA) 100 150 200 Ambient Temperature---TA() Power Derating Curve 25 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC() BTN2129T3 CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 5/5 E J K M Marking: 3 4 N2129 Style: Pin 1.Base 2.Collector 3.Emitter F H L 1 2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTN2129T3 CYStek Product Specification |
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